THE EFFECT OF DOPING WITH GROUP I ELEMENTS ON THE PIEZORESISTIVE PROPERTIES OF TLINSE₂ SINGLE CRYSTALS

Authors

  • Jasur Djoʻrayevich Ashurov PhD, Associate Professor, Department of General Technical Sciences, Asia International University

Keywords:

Single crystals, doping, piezoresistive properties, electrical conductivity, anisotropy.

Abstract

This article investigates the physical properties of TlInSe₂ single crystals, particularly their electrical resistance and piezoresistive sensitivity, under the influence of doping with Group I elements (Ag, Cu). The single crystals were synthesized using the Bridgman–Stockbarger method and doped with various concentrations. The samples were studied through X-ray diffraction, temperature-dependent resistivity measurements, dielectric response analysis, and resistance changes under external mechanical stress. The results revealed that the incorporation of Ag and Cu significantly affects the lattice parameters and the density of electronic states, leading to a multiple increase in piezoresistive sensitivity. These findings expand the potential applications of TlInSe₂-based single crystals in modern sensor devices.

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References

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Na doping in layered Sr2ZnO2Cu2Se2: influence on p-type conductivity. J. Mater. Chem. C, 2024.

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Published

2025-09-17

How to Cite

Jasur Djoʻrayevich Ashurov. (2025). THE EFFECT OF DOPING WITH GROUP I ELEMENTS ON THE PIEZORESISTIVE PROPERTIES OF TLINSE₂ SINGLE CRYSTALS. Journal of Applied Science and Social Science, 15(09), 384–386. Retrieved from https://www.internationaljournal.co.in/index.php/jasass/article/view/1795

Issue

Vol. 15 No. 09 (2025): Volume 15 Issue 09

Section

Articles

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