MECHANISM AND ANALYSIS OF THE PIEZO-PHOTORESISTIVE EFFECT IN TlInSe₂ SINGLE CRYSTALS

Authors

  • Jasur Djoʻrayevich Ashurov PhD, Associate Professor, Department of General Technical Sciences, Asia International University

Keywords:

piezo-photoresistive effect, TlInSe₂ single crystals, uniaxial deformation, electronic bands, optical transitions, sensors, semiconductors.

Abstract

This study investigates the electrical, photoelectric, and tensoresistive properties of TlInSe₂ single crystals under mechanical deformation. The changes in conductivity, photocurrent density, and electronic band structures were analyzed under compressive and tensile strain. The results demonstrate that uniaxial deformation along the [001] crystallographic direction alters the energy band gap of the crystal lattice, which in turn leads to either an increase or decrease in photocurrent and conductivity. The paper also presents modern analyses of the potential applications of these characteristics in nanoelectronics, optoelectronic sensors, and high-sensitivity mechanical detectors.

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References

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Published

2025-10-15

How to Cite

Jasur Djoʻrayevich Ashurov. (2025). MECHANISM AND ANALYSIS OF THE PIEZO-PHOTORESISTIVE EFFECT IN TlInSe₂ SINGLE CRYSTALS. Journal of Applied Science and Social Science, 15(10), 741–744. Retrieved from https://www.internationaljournal.co.in/index.php/jasass/article/view/2106